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Model Number : S1227-66BQ S1227-66BR
Place of Origin : Japan
MOQ : 1
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 5000pcs
Delivery Time : 3-5work days
Packaging Details : Paper box
Light-receiving side : 5.8 × 5.8 mm
encapsulation : ceramics
refrigeration : Non-cooled
Reverse voltage (max) : 5 V
Spectral response range : 190 to 1000 nm
Light sensitivity (typical) : 0.36 A/W
Silicon photodiodes S1227-66BQ
Features
- High UV sensitivity (quartz window type): QE = 75 % (λ = 200 nm)
- Suppressed IR sensitivity
- Low dark current
Noise equivalent power (typical) | 5.0×10-15 W/Hz1/2 |
Junction Capacitance (typical) | 950 pF |
Rise Time (Typical) | 2 μs |
Dark current (max) | 20 pA |
Light sensitivity (typical) | 0.36 A/W |
Silicon photodiodes S1227-66BR
It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses infrared sensitivity
Features
- Resin potting
type - Suppression of infrared sensitivity
- Low dark current
Light-receiving side | 5.8 × 5.8 mm |
encapsulation | ceramics |
refrigeration | Non-cooled |
Reverse voltage (max) | 5 V |
Spectral response range | 340 to 1000 nm |
Maximum Sensitivity Wavelength (Typical) | 720 nm |
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Silicon Photodiodes S1227-66BQ S1227-66BR Suppressed IR Sensitivity Images |